Effect of Calcination Temperature on Interface Properties Between In<sub>2</sub>O<sub>3</sub> and Au Electrode in Micro Gap Semiconductor Gas Sensors
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<jats:title>Abstract</jats:title><jats:p>The In<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> thin film nanosensors were fabricated by dropping In(OH)<jats:sub>3</jats:sub> sol on nano gap electrode with 0.1-2.5 micron of gap size, dried, and calcined at various temperatures. The grain size of In<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> and thus the number of In<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> grains were changed by calcining at 600-850 °C. The size of grain was increased from 15 nm at 600 °C to 55 nm at 850 °C, and thus the number of grains in 0.3 micron gap was decreased from 19 to 5.3. Contrary to the expectation, the small resistance changes to both 1 ppm Cl<jats:sub>2</jats:sub> (resistance increase) and 0.5 ppm Cl<jats:sub>2</jats:sub> (resistance decrease) were obtained for In<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> nanosensors calcined at 700-850 °C. These were contributed to the changes in the surface and interface chemical state to suppress the adsorption of or substitution with Cl<jats:sub>2</jats:sub> molecule.</jats:p>
収録刊行物
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- MRS Proceedings
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MRS Proceedings 915 2006-01-01
Springer Science and Business Media LLC
