Laser-induced surface doping of semiconductors
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説明
Formation of shallow junction with extremely high carrier concentration is presented by KrF excimer laser doping of GaAs using an ambient SiH 4 gas. The generation mechanism and thermal stability of the high carrier concentration in GaAs formed by the laser doping are also investigated. In addition, submicron patterned doping of Si into GaAs is demonstrated using a projection system. The projection-patterned doping is applied to self-aligned microfabrication of nonalloyed ohmic contacts with a low contact resistance with combination of a following plating process. Furthermore, junction deeper than 1 micrometers is formed by laser-driven diffusion of As + -implanted Si. The double-pulse irradiation method using two KrF excimer lasers drastically improves surface morphology and crystalline quality of the deep junction.
収録刊行物
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- SPIE Proceedings
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SPIE Proceedings 2703 478-, 1996-04-08
SPIE
