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0.6 μm BiCMOS based 15 and 25 V LDMOS for analog applications
Description
In the present paper, we report the development of complementally 25 V LDMOS, 15 V n-ch LDMOS, 18 V npn/pnp and 5 V CMOS. The developed LDMOS achieved high on-state breakdown voltages for the gate voltage of 5.0 V. The on-resistance values of the developed 15 V and 25 V n-ch LDMOS achieves 22.7 and 27.5 mn mm/sup 2/, respectively. The characteristics of bipolar transistors and CMOS are also sufficiently good.
Journal
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- Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216)
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Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) 169-172, 2002-11-13
Inst. Electr. Eng. Japan