Growth of carbon nanotubes on silicon nano-protrusions
説明
This paper reports a newly-developed growth control technique of carbon nanotubes by forming nano-sized protrusions on surface of a substrate. This technique consists of formation of nano-protrusions on a silicon substrate by reactive ion etching in chlorine plasma and growth of carbon nanotubes by chemical vapor deposition. Results show that the existence of the nano-protrusions gives lower growth density and the smaller diameter of CNTs.
収録刊行物
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- 2005 International Vacuum Nanoelectronics Conference
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2005 International Vacuum Nanoelectronics Conference 268-269, 2006-07-10
IEEE
