High-Resolution X-Ray Diffraction Analysis of “Devicequality” Cubic GaN Grown on (001)GaAs Substrate Prepared by Atomic-Hydrogen Treatment At “High Temperatures”
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<jats:title>Abstract</jats:title><jats:p>Cubic GaN (c-GaN) layers were grown by if-plasma source MBE on (001) GaAs prepared by atomic-hydrogen treatment at “high temperatures”, and the structural properties of the epilayers were investigated by the high-resolution X-ray rocking curve and the reciprocal space mapping measurements. The growth temperature was varied from 620 to 740°C. It was found that single domain “device-quality” c-GaN layers could be grown for the first time; the FWHM of the X-ray rocking curves for the (002) c-GaN could be as small as 70 - 90 arcsec and the inclusion of h-GaN phase in the c-GaN epilayers grown at temperatures above 680°C could be less than 4×10<jats:sup>-3</jats:sup>.</jats:p>
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- MRS Proceedings
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MRS Proceedings 482 1997-01-01
Springer Science and Business Media LLC