Time-Resolved Si Lattic-Temperature Measurement on Wide Time Scale (10<sup>−9</sup>–10<sup>0</sup> sec.) During Laser Annealing
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<jats:title>ABSTRACT</jats:title><jats:p>Time-resolved Si lattice-temperature measurement has been developed on wide time scale from 10<jats:sup>−9</jats:sup> to 10<jats:sup>0</jats:sup> sec during laser annealing, by utilizing the time-dependent optical interference in Si on sappire. This interference is due to small changes in Si refractive index induced by temporal changes in Si lattice-temperature. For ns–pulsed laser annealing, part of the absorbed photon energy is found to be transferred into lattice (phonons) in a time much shorter than 40-ns pulse duration. A new method using a microscope is demonstrated for time- and space-resolved Si latticetemperature measurements during cw laser annealing.</jats:p>
収録刊行物
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- MRS Proceedings
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MRS Proceedings 23 1983-01-01
Springer Science and Business Media LLC