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High performance MIM capacitor for RF BiCMOS/CMOS LSIs
Description
Using a newly proposed structure of the multi-via MIM capacitor, amorphous Ta/sub 2/O/sub 5/ films were investigated. Amorphous Ta/sub 2/O/sub 5/ with the proposed structure is one of the suitable combinations for the capacitors for RF analog applications.
Journal
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- Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)
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Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024) 133-136, 2003-01-20
IEEE