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<jats:title>ABSTRACT</jats:title><jats:p>Enhanced electroluminescence (EL) from vapor deposited <jats:italic>p</jats:italic>-sexiphenyl (6p) layer has been observed utilizing heterostructure of <jats:italic>p</jats:italic>-sexiphenyl emissive layer and <jats:italic>N</jats:italic>,<jats:italic>N'</jats:italic>-diphenyl-<jats:italic>N</jats:italic>,<jats:italic>N'</jats:italic>-(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) hole transporting layer. The EL device consists of an indium-tin oxide (ITO) anode, a hole transporting layer, an emissive layer, and a magnesium containing silver cathode. A heterostructure device with 50 nm-thick <jats:italic>p</jats:italic>-sexiphenyl and 60 nm-thick TPD shows the enhanced emission from the <jats:italic>p</jats:italic>-sexiphenyl emissive layer. The electroluminescence from the device shows the emission peak centered at 420 nm. The <jats:italic>p</jats:italic>-sexiphenyl/TPD heterostructure device emits 2 orders of magnitude higher intensity than the conventional single layer of <jats:italic>p</jats:italic>-sexiphenyl device. The mechanism of enhanced emission from the heterostructure device has been discussed utilizing energy band diagrams of these materials.</jats:p>
収録刊行物
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- MRS Proceedings
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MRS Proceedings 660 2000-01-01
Springer Science and Business Media LLC