Electromigration of metallic islands on Si(001) surface

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<jats:title>Abstract</jats:title><jats:p>Electromigration of metallic islands formed by vapour deposition on the Si(001) 2 × 1 surface has been investigated by an ultrahigh vacuum scanning electron microscope (UHV‐SEM) at temperatures higher than the melting points of the islands with heating by passing dc current through the Si substrate. The direction of the island migration depends on the kind of metal. The speed is approximately proportional to the island radius and increases exponentially with temperature. The activation energy for migration of Au islands is 0.6 eV. The driving force of the island migration is discussed.</jats:p>

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