Room-temperature forming of Ga-Sn-O film for thin-film transistors
説明
We have succeeded in forming a Ga-Sn-O (GTO) film for a thin-film transistor (TFT) using radio-frequency (RF) magnetron sputtering at room temperature without annealing process. The field-effect mobility is 0.48 cm2·V−1·s−1 and the threshold voltage is 2.22 V. This result suggests a possibility of rare-metal free amorphous metal-oxide semiconductors.
収録刊行物
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- 2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
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2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) 68-69, 2017-06-01
IEEE