Plasma Doping and Subsequent Rapid Thermal Processing for Ultra Shallow Junction Formation
説明
Authors summarize and update the status of plasma doping (PD) using He plasma amorphous (PA) technology and spectroscopic ellipsometry (SE). Authors also recommend PD as the best alternative method for ultra shallow junction formation at the 45 nm technology node and beyond. The latest annealing methods of laser annealing (LA) and flash lamp annealing (FLA) were combined with PD. Conventional spike RTA was also used to achieve adequate junction depth with lower resistance
収録刊行物
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- 2005 13th International Conference on Advanced Thermal Processing of Semiconductors
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2005 13th International Conference on Advanced Thermal Processing of Semiconductors 45-51, 2006-04-07
IEEE