A novel atomic layer doping technology for ultra-shallow junction in sub-0.1 μm MOSFETs
説明
This paper presents a novel technology to form an ultra-shallow source and drain extension (SDE) junctions for the future MOSFETs. In this technology, a dopant in an adsorbed layer on the Si surface diffuses into the substrate by the rapid thermal annealing (RTA). Shallow junction formation using arsenic (As) diffusion and boron (B) diffusion was realized by using this technology. This technology provided extremely shallow SDE junction depths with low sheet resistance for N and P-type doping.
収録刊行物
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- International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318)
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International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) 505-508, 2003-01-22
IEEE