Undoped GaAs with a Low Electron Concentration Grown on Si by Mocvd

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<jats:title>ABSTRACT</jats:title><jats:p>We have successfully grown undoped GaAs of very high resistivity on Si by MOCVD. The back and side edges of the Si substrate were coated with a Si<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub>/SiO<jats:sub>2</jats:sub> stacked layer to suppress Si incorporation Into GaAs by the gas phase transport mechanism during MOCVD growth. A 3- μm-thick GaAs layer was grown on this Si substrate at 750 °C in an atmospheric MOCVD reactor using the two-step growth technique. The electron concentration measured by a Polaron C-V profiler is 3xl0<jats:sup>l4</jats:sup> cm<jats:sup>−3</jats:sup>, as low as that of GaAs grown on GaAs substrate, up to the depth of 1.5 μm from the surface.</jats:p>

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  • MRS Proceedings

    MRS Proceedings 198 1990-01-01

    Springer Science and Business Media LLC

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