Low driving-voltage (1.1 Vpp) electroabsorption modulators operating at 40 Gbit/s
説明
40 Gbit/s InGaAlAs/InAlAs electroabsorption modulators driven by a Vpp as low as 1.1 V have been successfully fabricated. This low driving voltage is achieved by means of a sophisticated device design that optimizes the extinction and bandwidth.
収録刊行物
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- 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004.
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16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. 573-576, 2005-07-13
IEEE
