Activities at the Tokyo-EBIT 2005

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A report is given on recent activities at the Tokyo-EBIT (electron beam ion trap), which include mainly two subjects; (1) interaction of highly charged ions with surface, and (2) electron - highly charged ion collisions. For the former subject, highly charged ions extracted from the EBIT are used to impact samples, such as H-terminated Si. Incident charge dependence of sputtering ion yield is measured by means of time-of-flight secondary ion mass spectrometry (TOF-SIMS). For the latter subject, we have constructed the second beam line for extracted highly charged ions, where ions with several charge states are monitored at the same time with a position sensitive detector. From the electron beam energy dependence of the charge state distribution at the equilibrium, resonant processes, such as dielectronic recombination and resonant excitation double autoionization, are studied.

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