Impact of line/hole-antenna connected to well on plasma induced charging damage [IC interconnects]
説明
The impact of both a dummy line-antenna connected to a MOSFET well (line-ACe pattern) and a dummy hole-antenna connected to a MOSFET well (hole-ACe pattern) on plasma induced charging damage was studied. It was found that the line-ACe pattern was effective for reduction of the charging damage. Reducing the distance between the line-ACe pattern and a functional line connected to the gate was found to be key to production of a sufficiently large effect from the line-ACe pattern. Significant charging damage reduction was confirmed for the hole-ACe pattern and the line-ACe pattern. These results suggest that the charging damage reduction is due to well potential modulation, and that the hole-ACe pattern is one of the most promising methods for reducing the charging damage in damascene interconnection structures.
収録刊行物
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- 1998 3rd International Symposium on Plasma Process-Induced Damage (Cat. No.98EX100)
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1998 3rd International Symposium on Plasma Process-Induced Damage (Cat. No.98EX100) 197-200, 2002-11-27
American Vacuum Soc