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Evaluation of internal efficiency and waveguide loss of 50 nm-period GaInAsP/InP quantum-wire lasers
Description
Internal quantum efficiency /spl eta//sub i/ of GaInAsP/InP 20 nm-wide quantum-wire lasers with a period of 50 nm, fabricated by electron-beam lithography, wet chemical etching and OMVPE embedding growth, was evaluated from the cavity length dependence of the differential quantum efficiency. As the result, high internal quantum efficiency /spl eta//sub i//spl sim/1.0 was obtained at T<200 K, while it decreased with an increase of temperature.
Journal
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- Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129)
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Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129) 365-368, 2002-11-27
IEEE