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説明
<jats:p>The authors have fabricated and studied a ballistic one-dimensional p-type quantum wire using an undoped AlGaAs∕GaAs heterostructure. The absence of modulation doping eliminates remote ionized impurity scattering and allows high mobilities to be achieved over a wide range of hole densities and, in particular, at very low densities where carrier-carrier interactions are strongest. The device exhibits clear quantized conductance plateaus with highly stable gate characteristics. These devices provide opportunities for studying spin-orbit coupling and interaction effects in mesoscopic hole systems in the strong interaction regime where rs>10.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 89 2006-08-28
AIP Publishing
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詳細情報 詳細情報について
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- CRID
- 1873116917802775424
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- ISSN
- 10773118
- 00036951
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- データソース種別
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- OpenAIRE