Photo-Irradiation-Induced Narrowing of Photoluminescence Spectra from Porous Silicon
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<jats:title>Abstract</jats:title><jats:p>Porous silicon (PS) has been prepared by varying photo-irradiation time in the latter period of anodization, and spectral intensity and width of photoluminescence (PL) have been measured as well as their dependences on current density during the photo-irradiation. Significant differences in PL spectra have been found when the timing of photo-irradiation is varied during the anodization. Sufficient numbers of photo-excited holes are responsible for the formation of PS layers yielding bright and sharp PL. The narrowest FWHM obtained was 0.182eV for a PL peak energy of 1.71eV while the highest peak energy of PL with FWHM < 0.30 eV was 2.16 eV (575 nm).</jats:p>
収録刊行物
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- MRS Proceedings
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MRS Proceedings 452 1996-01-01
Springer Science and Business Media LLC