Self-aligned ground-plane FDSOI MOSFET
説明
We report the fabrication and the electrical characteristics of fully depleted n-channel SOI MOSFETs with a self-aligned ground-plane electrode in the silicon mechanical substrate underneath the buried oxide. The ground-plane electrode is shown to reduce short-channel effects.
収録刊行物
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- IEEE International SOI Conference SOI-02
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IEEE International SOI Conference SOI-02 23-24, 2002-01-01
IEEE