Characterization of Electron-Induced Defects in Cu (In, Ga) Se2 Thin Films by Photoluminescence
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説明
<jats:title>ABSTRACT</jats:title><jats:p>CIGS thin films were irradiated with 100 or 250 keV electrons to reveal the radiation defect by analyzing PL measurement. The PL intensity decreased due to non-radiative recombination defects induced by electron irradiation. Furthermore, the intensity 0.8 eV peak of the PL spectrum was observed from CIGS films irradiated with 250 eV electrons and is said to correspond to In-antisite defects in CIGS materials. The defects can usually change into In<jats:sub>Cu</jats:sub>-V<jats:sub>Cu</jats:sub> complex defects combined with V<jats:sub>Cu</jats:sub>, since the formation energy of the complex defect is lower than that of each defect. Cu interstitial defects induced by 250 keV electron irradiation would diffuse to V<jats:sub>Cu</jats:sub> of the complex defect, whereupon the complex defect might become an In-antisite defect due to 250 keV electron irradiation.</jats:p>
収録刊行物
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- MRS Proceedings
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MRS Proceedings 1771 157-161, 2015-01-01
Springer Science and Business Media LLC