Cr Atom Alignment in Cr-Delta-Doped GaN
この論文をさがす
説明
Structural properties and Cr atom alignments in Cr‐delta doped GaN grown by molecular beam epitaxy are studied with transmission electron microscopy and X‐ray absorption fine structure (XAFS) measurements. It is found that the environment around Cr atoms in delta‐doped samples is dramatically changed under various growth conditions. The XAFS analysis of these synthesized layers suggests that new Cr‐related complexes are grown.
収録刊行物
-
- AIP Conference Proceedings
-
AIP Conference Proceedings 882 410-412, 2007-01-01
AIP