Stable Configuration of an Interstitial Atom with Relaxation Effect in Si and Ge
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説明
<jats:title>Abstract</jats:title><jats:p>The stable configuration of an interstitial atom in Si and Ge are studied using the perturbational formalism presented earlier and considering the relaxation effect around the interstitial atom. The interstitial atom is most stable at the hexagonal site for Si and Ge. The calculated migration energy of the interstitial atom is smaller than 0.1 eV for Si and about 0.4 eV for Ge.</jats:p>
収録刊行物
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- physica status solidi (b)
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physica status solidi (b) 149 477-482, 1988-10-01
Wiley