Maskless Formation of Tungsten Films by Ion Beam Assisted Deposition Technique

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<jats:title>ABSTRACT</jats:title><jats:p>W films were deposited on n-GaAs by ion beam assisted deposition technique using low energy H<jats:sub>2</jats:sub><jats:sup>+</jats:sup> and Ar<jats:sup>+</jats:sup>, and film properties and residual damage in the substrate were investigated by measuring X-ray photoemission, current-voltage characteristics and deep level transient spectroscopy. Films with a resistivity of 1O<jats:sup>−5</jats:sup> ohm·cm were formed. It was observed that damage can be reduced using the low energy beams and that Schottky contacts with n-factor of almost 1 and barrier height of 0.88 eV were formed.</jats:p>

Journal

  • MRS Proceedings

    MRS Proceedings 158 1989-01-01

    Springer Science and Business Media LLC

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