Aluminum-Ion Implantation into 4H-SiC (11-20) and (0001)
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<jats:title>Abstract</jats:title><jats:p>High-dose aluminum-ion (Al<jats:sup>+</jats:sup>) implantation into 4H-SiC (11-20) and (0001) has been investigated. Surface morphologies of implanted (0001) samples were improved by annealing with a graphite cap. Implant-dose dependence and annealing-time dependence of electrical properties are examined by Hall-effect measurements. A low sheet resistance of 2.3 kΩ/sq. was obtained in (0001) by high-dose Al<jats:sup>+</jats:sup> implantation at 500 °C with a dose of 3.0 × 10<jats:sup>16</jats:sup> cm<jats:sup>−2</jats:sup> and high-temperature annealing at 1800 °C for a short time of 1 min. In the case of (11-20), even room-temperature implantation brought a low sheet resistance below 2 kΩ/sq. after annealing at 1800 °C.</jats:p>
収録刊行物
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- MRS Proceedings
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MRS Proceedings 815 2004-01-01
Springer Science and Business Media LLC