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GaInAsP/InP distributed feedback lasers with periodic wire-like active regions fabricated by CH/sub 4//H/sub 2/ reactive-ion-etching
Description
We demonstrated high performance operation of 1.55 /spl mu/m wavelength GaInAsP-InP comprehensively strained MQW DFB lasers with completely etched through active layers that were fabricated by CH/sub 4//H/sub 2/-RIE and with OMVPE regrowth.
Journal
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- Technical Digest. CLEO/Pacific Rim '99. Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.99TH8464)
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Technical Digest. CLEO/Pacific Rim '99. Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.99TH8464) 4 1291-1292, 2003-01-20
IEEE
