GaInAsP/InP distributed feedback lasers with periodic wire-like active regions fabricated by CH/sub 4//H/sub 2/ reactive-ion-etching

説明

We demonstrated high performance operation of 1.55 /spl mu/m wavelength GaInAsP-InP comprehensively strained MQW DFB lasers with completely etched through active layers that were fabricated by CH/sub 4//H/sub 2/-RIE and with OMVPE regrowth.

収録刊行物

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