Smart chip with selective micro-probes on Si(111) IC chips for detecting nerve potential

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A large number of single crystal Si micro-probes on Si(111) were fabricated selectively using VLS (Vapor-Liquid-Solid) growth method after IC process. The Si probes can be grown with a high aspect ratio more than a few hundreds. A diameter of the probes can be controlled from sub-micron to a few hundred microns. The Si probe position on the chip is also controlled and the chip with IC circuits can work even after the Si probe growth. Conductivity of the Si probes was controlled by using phosphorous diffusion, resulting in a resistivity of 10 -2 Ω•cm from 10 4 Ω•cm for a diffusion temperature of 1100°C. In in-vivo studies, penetrating micro-probe array of low impedance such as the VLS growth Si probes has been desired, therefore electrical and mechanical properties were studied detected successfully.

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