Possibility of a Si-Based Infrared Detector Using Microcrystalline B-Si-Ge Alloys
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<jats:title>ABSTRACT</jats:title><jats:p>Microcrystalline films of B-Si-Ge alloy have been deposited by the sputtering of Ge target in atmosphere of SiH<jats:sub>4</jats:sub> and B<jats:sub>2</jats:sub>H<jats:sub>6</jats:sub>. Microcrystalline B-Si-Ge alloy/Si hetero-junction was fabricated on p-type Si(100) wafers with the resistivity of 1∼10 Ωcm. The barrier height of this Schottky structure was estimated to be in the range of 0.20∼0.30 eV which can be controlled by inclusion amounts of boron. The reverse biased Schottky characteristic using the microcrystalline B-Si-Ge alloy as to the gate shows the avalanche breakdown by illuminating of 6 μm light.</jats:p>
収録刊行物
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- MRS Proceedings
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MRS Proceedings 228 1991-01-01
Springer Science and Business Media LLC
