CaBi<sub>4</sub>Ti<sub>4</sub>O<sub>15</sub> thin film deposition on electroplated Platinum substrates using a sol-gel method
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<jats:title>ABSTRACT</jats:title><jats:p>CaBi<jats:sub>4</jats:sub>Ti<jats:sub>4</jats:sub>O<jats:sub>15</jats:sub> growth on different Platinum substrates was carried out through a sol-gel method. Higher crystallization temperature and 20% excess Bi decreased pyrochlore contents in the CaBi<jats:sub>4</jats:sub>Ti<jats:sub>4</jats:sub>O<jats:sub>15</jats:sub> films. Repetition through coating, calcination and crystallization decreased void formation on the surface. C-axis oriented thin film could be grown on sputtered platinum substrates with low Pt (200) orientation. On electroplated Pt substrates, (119) oriented CaBi<jats:sub>4</jats:sub>Ti<jats:sub>4</jats:sub>O<jats:sub>15</jats:sub> thin film was grown, suggesting surface roughness of Pt substrates is a crucial factor for orientation control of sol-gel derived CaBi<jats:sub>4</jats:sub>Ti<jats:sub>4</jats:sub>O<jats:sub>15</jats:sub> thin film.</jats:p>
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- MRS Proceedings
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MRS Proceedings 1113 2008-01-01
Springer Science and Business Media LLC