High field phenomena in poly-p-xylylene thin films-oxidation effects

説明

High-field currents in PPX thin films were suppressed by the introduction of an oxidized layer. The closer to the anode the oxidized layer was located, the more effectively it suppressed the high-field current. The oxidized layer also increased the dielectric strength of PPX thin film. These results can be explained in terms of carrier scattering due to C=0 in the oxidized layer and the suppression of hole injection from the anode due to the oxidized layer. >

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