- 【Updated on May 12, 2025】 Integration of CiNii Dissertations and CiNii Books into CiNii Research
- Trial version of CiNii Research Knowledge Graph Search feature is available on CiNii Labs
- Suspension and deletion of data provided by Nikkei BP
- Regarding the recording of “Research Data” and “Evidence Data”
Investigation of surface potential distributions of phosphorus-doped n-BaSi<sub>2</sub>thin-films by kelvin probe force microscopy
Description
We investigated the surface potential distributions around grain boundaries (GBs) in phosphorus (P)-doped n-BaSi2 thin-films by Kelvin probe force microscopy (KFM) and the crystal planes constituting GBs by transmission electron microscopy (TEM). By KFM measurements, it was found that the GBs in P-doped n-BaSi2 are different from those in undoped BaSi2; undoped n-BaSi2 has a downward band bending around the GBs with barrier heights of approximately 30 meV. In contrast, P-doped n-BaSi2 has an upward band bending with barrier heights of approximately 15 meV. TEM observation revealed that most of the GBs in P-doped BaSi2 are composed of BaSi2 (011)/(0-11) planes. This result is the same as that in undoped BaSi2.
Journal
-
- Proc. Int. Conf. and Summer School on Advanced Silicide Technology 2014
-
Proc. Int. Conf. and Summer School on Advanced Silicide Technology 2014 011403-, 2015-01-01
Japan Society of Applied Physics