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Effects of body reverse pulse bias on geometric component of charge pumping current in FD SOI MOSFETs
Description
The geometry-dependent component in charge pumping current (I/sub cp/) is well known as the undesirable factor causing the overestimated interface state density in FD SOI devices (Brugler and Jespers, 1969; Groeseneken et al, 1984; Li and Ma, 1995). In this work, the effects of the body reverse pulse bias on the geometric component of I/sub cp/ in fully depleted (FD) SOI MOSFETs are described. The majority carriers of the high resistivity body region can be completely removed by a reverse pulse applied to the body. As a result, the geometry-dependent component is suppressed. This method also suppresses the reduction of effective channel length which takes place when using a DC reverse bias.
Journal
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- 1998 IEEE International SOI Conference Proceedings (Cat No.98CH36199)
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1998 IEEE International SOI Conference Proceedings (Cat No.98CH36199) 79-80, 2002-11-27
IEEE
