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High frequency performance of GaAsSb/InAlAs/InGaAs tunnel diodes at 220 GHz
Description
We evaluated performance of zero-bias, square-law GaAsSb/InAlAs/InGaAs tunnel diodes at frequencies up to 220 GHz. The detectors with submicron cross-sectional area demonstrated sensitivities above 500 V/W, and curvature coefficients of 20 V−1.
Journal
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- 2012 37th International Conference on Infrared, Millimeter, and Terahertz Waves
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2012 37th International Conference on Infrared, Millimeter, and Terahertz Waves 1-2, 2012-09-01
IEEE
