X-ray phase-shift mask for proximity x-ray lithography with synchrotron radiation
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説明
In proximity X-ray lithography at the feasible gap size of approximately 10 micrometer, using attenuated phase-shift masks is the most effective method of achieving high resolution pattern transfer at the feature size of sub-100 nm. In this study, we have investigated the absorption and the phase-shift controllability of X-ray masks with various absorber materials by simulation and found that the phase- shift mask structure with Cu absorber is one of the best choices for proximity X-ray lithography using synchrotron radiation.
収録刊行物
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- SPIE Proceedings
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SPIE Proceedings 3748 462-, 1999-08-25
SPIE