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Temperature stable wavelength TlInGaAs/InP DH LEDs grown by gas source MBE
Description
TlInGaAs/InP double heterostructure (DH) light emitting diodes (LEDs) were grown on [100] InP substrates by gas source molecular beam epitaxy. The Tl composition was 6%. They were operated up to 340 K in the wavelength range of 1.58 /spl mu/m. Very small temperature variation in the electroluminescence (EL) peak energy (-0.09 meV/K) was observed, similar to the temperature variation of photoluminescence (PL) peak energy.
Journal
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- Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)
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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) 105-108, 2002-11-13
IEEE