Formation of Mn Oxide with Thermal CVD and its Diffusion Barrier Property Between Cu and SiO<sub>2</sub>
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説明
<jats:title>ABSTRACT</jats:title><jats:p>A manganese oxide layer was formed by thermal chemical vapor deposition(CVD) on a tetraethylorthosilicate (TEOS) oxide substrate. The thickness of the Mn oxide layer could be varied 2.6 to 10 nm depending on deposition temperature. Heat-treated samples of PVD Cu / CVD Mn oxide /SiO<jats:sub>2</jats:sub> indicated no interdiffusion. The CVD Mn oxide was found to be a good diffusion barrier layer.</jats:p>
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- MRS Proceedings
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MRS Proceedings 1079 2008-01-01
Springer Science and Business Media LLC