Atomic Structures of Planar Defects in Si and GaAs

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<jats:title>ABSTRACT</jats:title><jats:p>Atomic structures of planar defects in Si and GaAs have been studied by TEM. An HREM image of the edge of {113} planar defect has been obtained with <110> incidence. An analysis of the image has showed diat the edge consists of 5-, 6- and 7-membered rings without dangling bond. Anisotropie morphology of the defect could be understood from the model proposed in this report. Weak diffuse scattering and an extinction rule in diffraction patterns from the defect have been found. The experimental evidence has supported the model of the {113} defect.</jats:p><jats:p>A planar defect on {111} in a heavily Si doped GaAs has been studied. The result has indicated that Si precipitates on the two {111} net planes inserted in the GaAs matrix.</jats:p>

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  • MRS Proceedings

    MRS Proceedings 262 1992-01-01

    Springer Science and Business Media LLC

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