4H-SiC-DIMOSFET power device for home appliances
説明
The 5×4.2 mm2 chip of the SiC DIMOSFET was fabricated and tested. The drain-source avalanche breakdown voltage without any gate bias (Vgs=3D0V) is measured to be >1000V. The drain current (Id) >40A is observe under the conditions of Vds=3D1V and Vgs=3D+20V. Typical Ron and specific Ron are measured to be 22 mΩ and 3.5 mΩcm2 with V th =3D2.3V. The SiC DIMOSFET is introduced into the PE circuits of the commercially available all-metal IH cooktop to test the loss-energy saving. On the PFC circuit, 2/3 reduction of the energy loss of the SW device is confirmed. On the inverter circuit, 21W reduction of the energy loss of the SW device is confirmed.
収録刊行物
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- The 2010 International Power Electronics Conference - ECCE ASIA -
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The 2010 International Power Electronics Conference - ECCE ASIA - 3249-3253, 2010-06-01
IEEE
