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説明
We have observed a metal-insulator transition of a quasi-two dimensional electronic system in transition metal dichalcogenide $2H$-TaSe$_2$ caused by doping iron. The sheet resistance of $2H$-Fe$_x$TaSe$_2$ ($0 \leq x \leq 0.120$) single crystals rises about $10^6$ times with the increasing of $x$ at the lowest temperature. We investigated the temperature dependence of the resistance and found a metal-insulator transition with a critical sheet resistance $11.7 \pm 5.4$ k$\rm��$. The critical exponent of the localization length $��$ is estimated $0.31 \pm 0.18$. The values of the critical sheet resistance and $��$ are accordant to those of the \textit{chiral unitary class} (less than $h/1.49e^2=17.3$ k$\rm��$ and $0.35 \pm 0.03$, respectively). We suggest that $2H$-Fe$_x$TaSe$_2$ is classified as the chiral unitary class, not as standard unitary class.
10 pages, 4 figures
収録刊行物
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- Journal of Low Temperature Physics
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Journal of Low Temperature Physics 183 41-49, 2016-01-25
Springer Science and Business Media LLC
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詳細情報 詳細情報について
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- CRID
- 1873398393057788800
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- ISSN
- 15737357
- 00222291
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- データソース種別
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- OpenAIRE