Fabrication of Surface Nitridation Mask on GaAs Substrate for Nano-Lithography

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説明

<jats:title>ABSTRACT</jats:title><jats:p>The surface nitridation of GaAs substrate under various conditions were performed and its surface morphology was studied by using atomic force microscope. The RMS roughness of the surfaces was closely related to formation of the particles which was formed by As evaporation and subsequent Ga migration, which was enhanced by higher substrate temperature.</jats:p>

収録刊行物

  • MRS Proceedings

    MRS Proceedings 843 2004-01-01

    Springer Science and Business Media LLC

詳細情報 詳細情報について

  • CRID
    1873398393079215616
  • DOI
    10.1557/proc-843-t3.5
  • ISSN
    19464274
    02729172
  • データソース種別
    • OpenAIRE

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