A two-dimensional computer simulation of hot carrier effects in MOSFETs

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説明

Substrate and gate injection currents due to impact ionization are calculated using a newly developed total simulator. The model for these currents includes the introduction of a new injection criterion for electrons to account for the observed discrepancy between measurement and calculation based on previous models. Good agreement with measurement is obtained for both currents. The model is also applied to the estimation of threshold voltage shifts in scaled down MOSFETs and unintentional writings of EPROM cells.

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