Influence of Mn doping conditions on electroluminescent characteristics of ZnS:Mn thin-film electroluminescent (TFEL) devices using insulating ceramic

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Abstract The relationship between the electroluminescence (EL) characteristics and the manganese doping conditions of the ZnS:Mn thin-film emitting layer has been investigated using insulating ceramic-type thin-film EL (ICTFEL) devices. In the preparation of the emitting layer by metalorganic chemical vapor deposition (MOCVD), the usefulness of tricarbonylmethylcyclopentadienyl manganese (TCM) as the dopant is described in detail. An ICTFEL device with an emitting layer doped with TCM exhibits a high luminance of 9300 cd/m 2 at applied voltage of 300 V. It has been found that TCM is an excellent manganese source in the MOCVD method and the optimum content of manganese is about 1.3%.

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