Exciton Related Stimulated Emission in ZnO-Based Multiple-Quantum Wells
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説明
The mechanism of ultraviolet stimulated emission was investigated in ZnO/ZnMgO multi-quantum wells grown by laser-molecular-beam epitaxy (laser-MBE) on a lattice-matched ScAlMgO 4 (SCAM) (0001) substrate. Stimulated emission induced by exciton-exciton scattering occurred throughout a range of temperatures from 5 K to room temperature. At temperatures higher than 160 K, also stimulated emission due to electron-hole plasma recombination was observed with a higher excitation threshold than that of exciton-exciton scattering. Stimulated emission due to the radiative recombination of localized biexcitons has been observed at low temperatures (5 K). By examining the relative energy positions of the emission lines and the dependence of their intensities on the excitation power density it has been verified that theses lines occur due to the recombination of localized excitons and biexcitons and due to the exciton-exciton scattering. The excitation threshold for biexciton emission was significantly lower than that for exciton-exciton scattering. The binding energy of biexcitons in multi-quantum wells is largely enhanced by quantum confinement effects.
収録刊行物
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- physica status solidi (a)
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physica status solidi (a) 192 14-20, 2002-07-01
Wiley
