Fundamental Study of Optical Probe Current Sensor using Kerr Effect of Single Magnetic Domain Film
説明
An optical probe current sensor using a Kerr effect ofan Fe-Si/Mn-Ir exchange-coupled film has been investigated. The optical sensing technique has the advantage of no induced noise from the external electromagnetic interference. In addition, since the proposed method using the Kerr effect of single domain exchange-coupled magnetic thin film utilizes only magnetization rotation, the Barkhausen noise due to a domain wall pinning can be excluded. A fabricated optical probe current sensor consisting of He-Ne laser,e-Si/Mn-Ir exchange-coupled film, beam splitter, pin-PD and differential amplifier, exhibited a current sensing bandwidth of 10 kHz and a sensitivity of 2.26 V/A. By using the fabricated optical probe current sensor, the current sensing for PWM inverter motor has been demonstrated.
収録刊行物
-
- IEEE SENSORS 2009 Conference
-
IEEE SENSORS 2009 Conference 1232-1237, 2009-10-25
IEEE
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1050570088431726336
-
- NII論文ID
- 120007104243
-
- HANDLE
- 10091/3403
-
- 本文言語コード
- en
-
- 資料種別
- conference paper
-
- データソース種別
-
- IRDB
- Crossref
- CiNii Articles
- OpenAIRE