Fabrication and characterization of an undoped GaAs single hole transistor
説明
We have fabricated and characterized a single hole transistor in an undoped AlGaAs-GaAs heterostructure. Our device exhibits Coulomb blockade oscillations and shows stable electrical characteristics with little drift and improved noise performance.
収録刊行物
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- 2010 Conference on Optoelectronic and Microelectronic Materials and Devices
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2010 Conference on Optoelectronic and Microelectronic Materials and Devices 113-114, 2010-12-01
IEEE