Combinatorial Synthesis Approach for Optimizing Oxide/Si Interfaces for the Future Ulsi
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<jats:title>Abstract</jats:title><jats:p>A combinatorial material synthesis with temperature gradient heating system was employed to optimizing growth parameters for oxide growth on Si substrate. From the obtained results, it was found the dielectric property depends on the growth temperature as well as the composition. The interface structures were investigated by high resolution electron microscopy with a series of specimens fabricated by micro sampling method. The results showed that amorphous oxide region and SiO<jats:sub>2</jats:sub> layer were formed at the interface. It was speculated that the amorphous oxide region contributed to the reduction of the dielectric property. To avoid the amorphous and SiO<jats:sub>2</jats:sub> formation at the oxide/Si interface, a few kinds of intermediate layers were inserted and tested to find the possibility of abrupt interface formation.</jats:p>
収録刊行物
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- MRS Proceedings
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MRS Proceedings 700 2001-01-01
Springer Science and Business Media LLC