Self-excited Raman scattering by intersubband transition in AlGaInP/InGaP quantum well lasers at 300 K
説明
Efficient self-excited electron and phonon Raman scattering spectra are observed above threshold in 0.68/spl mu/m-AlGaInP/InGaP quantum well lasers at room temperature. They are assigned to electron intersubband transitions between the first and the second subbands in the quantum well accompanied with longitudinal optical phonon scattering.
収録刊行物
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- Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)
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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) 747-748, 2003-06-25
IEEE