Oxygen-contamination-free ultra-low-resistance silicided contact technology for high performance power devices
説明
We have developed an ultra-low contact resistance metallization process employing oxygen-contamination-free silicidation technology combined with ion beam mixing technique. Suppression of native-oxide layer formation on the metal surface by use of an in situ formed Si encapsulation layer has resulted in ultra-low metal-to-silicon contact resistances of 3.3/spl times/10/sup -9/ /spl Omega//spl middot/cm/sup 2/ and 7.5/spl times/10/sup -9/ /spl Omega//spl middot/cm/sup 2/ with Ta silicided contacts for n/sup +/-Si and p/sup +/-Si, respectively.
収録刊行物
-
- Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95
-
Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 434-437, 2002-11-19
Inst. Electr. Eng. Japan