Double LDD concave (DLC) structure for sub-half micron MOSFET
説明
A novel concave-structure MOSFET named a double lightly doped drain concave (DLC) structure was developed for sub-half-micron MOSFETs which can operate at a 5 V supply voltage. This structure has an impurity profile of n/sup +/-n/sup -/-p/sup -/-p along the side wall of the groove. It has been shown that the DLC MOSFET has excellent characteristics, such as (1) high drain sustaining voltage, (2) a reduced short-channel effect, (3) high current drivability, and (4) high reliability. The high current drivability provides high-speed switching. >
収録刊行物
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- Technical Digest., International Electron Devices Meeting
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Technical Digest., International Electron Devices Meeting 226-229, 2003-01-06
IEEE