GaAs and Ga<inf>1-x</inf>Al<inf>x</inf>As light-emitting devices with light-activated negative resistance
説明
New GaAs and Ga 1-x Al x As electroluminescent ("LANER") diodes have been developed that exhibit light-activated negative resistance. Room-temperature switching operation is possible. In the case of the GaAs device, the p-n-p-n structure was fabricated by liquid epitaxy, using Si as an amphoteric dopant. This multilayer structure was prepared in one growth process by varying the cooling rate, typically from 0.5° C/rain to 14° C/min. The p-n-p-n structure was examined by measuring both photovoltaic effects and the I-V characteristics. Breakdown can be triggered by light or by increasing voltage, similar to the behavior of an SCR. The turnover voltage V t , in this diode is typically 15 V at room temperature. V t decreases with decreasing temperature and with increasing irradiation intensity. The current flowing through the diode is less than 0.1 mA below V t . In the high-conductivity state, radiation with a peak at 9400 A is emitted, with an external efficiency of about 5%. Switching times of 0.25 µs are attained at higher applied voltage.
収録刊行物
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- 1970 International Electron Devices Meeting
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1970 International Electron Devices Meeting 156-156, 1970-01-01
IRE